IPR2019-00020 - Samsung Electronics Co Ltd v. Invensas Bonding Technologies Inc

Details
PATENT NUMBER
9391143 High-Tech
APPL. NUMBER
14957501
PETITIONER
Samsung Electronics Co Ltd
Large Operating Company
PATENT OWNER
Invensas Bonding Technologies Inc
NPE (Patent Assertion Entity)
STATUS
Settlement
FILING DATE
2018-10-02
INSTITUTION DATE
N/A
TERMINATION DATE
2018-12-21
PET. COUNSEL
O’Melveny & Myers LLP
P.O. COUNSEL
Latham & Watkins LLP
AUTHOR JUDGE
Timeline
Petition
Notice of Filing Date
Motion to Terminate
Final Decision
Oct
Nov
Dec
2019
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
2020
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
2021
Feb
Mar
Docket
Paper No.
Date
Party
Type
Name
12018-10-02PetitionerPetitionPETITION FOR INTER PARTES REVIEW OF U.S. PATENT NO. 9,391,143
22018-10-02PetitionerPower of AttorneyPower of Attorney Samsung Electronics Co., Ltd.
32018-10-02PetitionerPower of AttorneyPower of Attorney Samsung Electronics America, Inc.
10012018-10-02PetitionerU.S. Patent No. 9,391,143 ("the "143 Patent")
10022018-10-02PetitionerProsecution File History of U.S. Patent No. 9,391,143
10032018-10-02PetitionerDeclaration of Dr. Charles Hunt
10042018-10-02PetitionerCurriculum Vitae for Dr. Charles Hunt
10052018-10-02PetitionerY. Li et al., Systematic Low Temperature Silicon Bonding Using Pressure and Temperature, 1998 Jpn. J. Appl. Phys. 37 (1998) ("Li")
10062018-10-02PetitionerM. Reiche et al., The Effect of a Plasma Pretreatment on the Si/Si Bonding Behaviour, 97-36 Electrochemical Society Proceedings 437 (1997) ("Reiche")
10072018-10-02PetitionerU.S. Patent No. 5,503,704 ("Bower")
10082018-10-02PetitionerQ. Tong et al., Semiconductor Wafer Bonding: Science and Technology, John Wiley & Sons, Inc. (1999)
10092018-10-02PetitionerA. Li, Systematic Low Temperature Bonding and its Application to the Hydrogen Ion Cut Process and Three- Dimensional Structures (1999)
10102018-10-02PetitionerQ. Tong et al., Wafer Bonding and Layer Splitting for Microsystems, 11 Advanced Materials 1409 (1999)
10112018-10-02PetitionerR. Bower et al., Low Temperature Si3N4 Direct Bonding, 62 Applied Physics Letters 3485 (1993)
10122018-10-02PetitionerDeclaration of Dr. Sylvia Hall-Ellis Regarding Li and Reiche
10132018-10-02PetitionerDeclaration of Rachel J. Watters Regarding Li
10142018-10-02PetitionerDeclaration of Elizabeth Craanen of The Electrochemical Society, Inc. Regarding Reiche
42018-10-22Potential Patent OwnerPower of AttorneyPatent Owner's Power of Attorney
52018-10-22Potential Patent OwnerMandatory NoticePatent Owner's Mandatory Notices
62018-10-31Potential Patent OwnerOtherPatent Owner's Motion for District Court (Phillips) Patent Claim Construction
72018-11-06BoardNotice of Filing DateNotice of Accord Filing Date
82018-12-13PetitionerMotion to TerminateJoint Motion to Terminate Proceeding Pursuant to 35 U.S.C. 317 and 37 C.F.R. 42.74
92018-12-13PetitionerOtherJoint Request to File Settlement Agreement and Consent Letter As Business Confidential Information Under 35 U.S.C. 317 and 37 C.F.R. 42.74
102018-12-21BoardFinal DecisionTermination Decision Document
112019-01-08PetitionerOtherPetitioner's Request for Refund of Fees
122019-02-01BoardOtherNotice of Refund
Grounds Asserted

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